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Nanohub MOSFET 2

저작시기 2011.04 |등록일 2014.08.18 파워포인트파일MS 파워포인트 (ppt) | 22페이지 | 가격 1,000원

목차

1. MOSFET-1 Simulation – TOX=2nm, Channel doping=1e18/cm3
2. MOSFET-2 Simulation - TOX=1nm, Channel doping=1e18/cm3
3. MOSFET-3 Simulation - TOX=1nm, Channel doping=2e18/cm3
4. MOSFET-4 Simulation - TOX=1nm, Channel doping=1.8e18/cm3
5. MOSFET-1 Simulation – TOX=2nm, Channel doping=1e18/cm3, Lg=100nm
6. MOSFET-4 Simulation - TOX=1nm, Channel doping=1.8e18/cm3, Lg=300nm
7.VTL vs. Lg for MOSTEF-1 and MOSFET-4

본문내용

1. MOSFET-1 Simulation – TOX=2nm, Channel doping=1e18/cm3
From Id-Vg graph (Vd=0.05V) Threshold voltage VTL1=0.152 V

Ion1=9.7696E-4 A at Vg=Vd=1.5V
Ioff1=1.69678E-7 A at Vg=0V, Vd=1.5V

2. MOSFET-2 Simulation - TOX=1nm, Channel doping=1e18/cm3
From Id-Vg graph (Vd=0.05V) Threshold voltage VTL2=0.063 V (VTL decreased compare to VTL1=0.152 V)

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