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서강대학교 물리전자공학 설계 Design of NMOSFETs

저작시기 2012.06 |등록일 2013.04.12 | 최종수정일 2014.01.03 한글파일한글 (hwp) | 4페이지 | 가격 2,500원

소개글

논문형식으로 작성하였습니다.
nanocad simulator를 이용한 long channel NMOSFET설계입니다.
공부에 많은 도움되길 바랍니다.

목차

1. Title
2. Design Objective
3. Results and Discussion
4. Conclusion
5. References

본문내용

1. Title
Design and analysis of long-channel nMOSFETs

2. Design Objective
Long-channel nMOSFETs will be designed and analyzed.

3. Results and Discussion
Part A. Design a 0.5-um-long nMOSFET such that you can get good performance for 3-V operation.

△ Structure of nMOSFET

In a MOSFET, the current through the drain and source, is equal to . From this equation, as gate length L becomes smaller the `short-channel effect` affects MOSFET and leads to decrease of ( roll-off) and DIBL effect. But in this design, we can ignore those effects because 0.5um gate length is sufficiently long. The factors that determine the performance are the S factor and the parameter. The standby power that a MOSFET consumes is . As MOSFET is not working when its off, it is essential to make as small as possible.

참고 자료

Streetman, Solid State Electronic Device 6/e, Pearson Education. pp. 282~313, 2006
Sedra/Smith, Microelectronic Circuits 6/e, Oxford Univ. Press. pp. 355~379, 2011
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