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[물리학]전자물성,반도체기초

저작시기 2007.01 |등록일 2007.03.30 파워포인트파일MS 파워포인트 (ppt) | 26페이지 | 가격 1,500원

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반도체 공정 및 전자물성의 기초를 그림과 더불어 글로 쉽게 설명한 파워포인트 자료

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An Overview of Microelectronic Fabrication
Diamond vs. Zinc-Blende
Energy Band Diagram
BJT Fabrication
MOS TRANSISTORS
MOS) Processes
Basic Complementary MOS (CMOS) ProcessBasic Bipolar Processing

본문내용

CHAP 1 : An Overview of Microelectronic Fabrication

A Historical Perspective
Semiconductor Materials
Elemental : Si, Ge
Compound : SiC, InP, GaN, GaAs
Alloy : AlxGa1-x As
Abbreviated Periodic Table

Why Silicon ?
Si is abundant element in nature.
Si has an electrically excellent and mechanically stable oxide.
Si has a wider bandgap than Ge.
More importantly, there are no alternative (or comparable) semiconductor materials to replace the Si so far.

How about GaAs, GaN, SiC, AlxGa1-x As, etc. ?
Supercomputer
Optical Devices
Devices for Mobile Communication
Devices for Military Purpose

Chemical Vapor Deposition (CVD)
Oxidation
Photolithography
Etching
Diffusion
Evaporation, Sputtering
Ion Implantation
Epitaxy

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