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리소그래피 강의노트

저작시기 2007.01 |등록일 2007.03.29 파일확장자압축파일 (zip) | 19페이지 | 가격 1,500원

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리소그래피 강의노트입니다.

목차

Chapter 1. Introduction to Optical Lithography
Chapter 2. Optical Aligners and Photomasks
Chapter 3. Advanced Lithography
Chapter 4. Overview of Simulation Tools for Lithography

Chapter 5. Photoresists
Chapter 6. Introduction to Geometrical Optics
Chapter 7. Diffraction Imaging Theory (Aerial image)
Chapter 8. Photoresist Exposure and Bleaching
Chapter 9. Anti-reflective layer
Chapter 10. Photoresist Bake Effects
Chapter 11. Photoresist Development
Chapter 12. Lithographic Analysis
Chapter 13. Optical Proximity Corrections

본문내용

3. Resolution and Depth of Focus

1) resolution (based on Rayleighs criterion)
: the ability of an optical system to distinguish closely spaced objects.
* minimum resolution of lithographic tools
-. the dimension of minimum linewidth or space that the machine can adquately print (or resolve)
-. it depends on the photoresist and etching technology as well as the resolution of the aligner.
theoretical resolution
k1, : process dependent constants
( k1 = 0.5 for a research environment, 0.8 for a production process)

2) Depth of focus
: focus tolerance
-. Focus errors result from errors in autofocusing, wafer bow, and topography
-. It is desirable for the latent image in the resist to remain in focus throughout the thickenss of the resist.
Depth of Focus
k1, k2 : process dependent constants
( k1 = 0.5 for a research environment, 0.8 for a production process, k2 = 0.5 )


..

3) pattern registration capability
: a measure of the degree to which the pattern being printed can be "fit" relative to a previously printed pattern

4) dimensional control
: the ability to produce device feature sizes over the entire wafer surface with high accuracy and precision

5) throughput


4. SIA roadmap & Trend

1) SIA Lithography RoadMap

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