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박막 증착 기술 (Thin Film Deposition Technology)

저작시기 2007.01 |등록일 2007.03.21 파워포인트파일MS 파워포인트 (ppt) | 15페이지 | 가격 1,000원

소개글

최근 TFT LCD, OLED, PDP, 반도체 등의 기술발전에 있어서 꼭 필요한 기술인 박막증착에 관련된 리포트 입니다. 최근 산업 신기술의 추이를 바탕으로 작성하였으며 원론에서부터 응용제품까지 폭넓은 내용을 포함하고 있습니다. 또한 깔끔한 PPT 디자인과 애니메이션을 적극 활용하였습니다. 내용은 영문으로 작성하였습니다. 고급 발표 자료로 활용하시기에 적합할 것이라고 생각됩니다.

목차

Trend of Micro Device
Next Generation Semiconductor Technology
Ion Beam Deposition Technology
Process of Ion Beam Deposition
IBD vs. Conventional Sputter Deposition
Advantages of Ion Beam Deposition
Application of Ion Beam Deposition
Atomic Layer Deposition Technology
Mechanism of ALD
ALD Process Features
ALD vs. Conventional CVD
Application of Thin Film Technology
Application of Thin Film Technology

본문내용

<Ion Beam Deposition Technology>

Film microstructure and interface control with IBD:
- Primary beam and Assist beam species and energy, Assist flux

Excellent uniformity achievable through wafer tilt and rotation
- proper choice of geometry is critical in IBD

IBD is a true low-pressure process(< 2× 10-4 Torr)
- Gas phase collisional mean free path » target to substrate distance

IBD provides naturally highly collimated sputtered species
- Deposition can be carried out at well defined impingement angles
through wafer tilt
- Superior step and conformal coverage are possible

<Atomic Layer Deposition Technology>

ALD (Atomic layer Deposition) previously known by the name ALE
(Atomic Layer Epitaxy) was originated by T. Suntola in Finland.

Deposition method by which precursor gases or vapors are alternately
pulsed on to the substrate surface.

Precursor gases introduced on to the substrate surface will chemisorb
or surface reaction takes place at the surface.

Surface reactions on ALD are all self-limiting.

Two fundamental self-limiting mechanisms in ALD : CS-ALD and RS-ALD.

CS-ALD : Chemisorption saturation process followed by exchange reaction.

RS-ALD : Sequential surface chemical reaction.

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