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[화학실험]Etching Process(final)

저작시기 2006.02 | 등록일 2006.02.02 한글파일 한컴오피스 (hwp) | 10페이지 | 가격 1,000원

소개글

에칭 프로세스에 대한 레포트입니다
wet 에칭과 dry에칭을 이용한 v-groove제작에 관한 내용이 실려있습니다
좋은 자료이니 많은 이용바랍니다

목차

1. 실험목적··································································· 1

2. 실험방법 및 이론··························································· 1

1)ICP를 이용한 플라즈마 Dry Etching······································ 1

2)Wet Etching 원리 및 V-groove 제작······································ 2
가)Ti Wet Etching
나)V-groove 제작

3. 결과 및 고찰······························································· 6
4. 실험장비··································································· 8
5. 참고자료··································································· 9

본문내용

1.실험목적

Photolithograpy 공정에서 중요한 부분을 차지하는 식각(Etching)공정에 대해서 이해하고, Dry etching과 Wet etching을 각각 실습한다. 그리고 Wet etching 방법을 이용해서 V-groove 를 제작하고, Etching time을 변수로 하여 각각의 Patterning 정도를 분석한다.

2.실험방법 및 이론

1)ICP를 이용한 플라즈마 Dry Etching
ICP를 이용한 플라즈마 Dry Etching은 직접 수행하지는 못하였지만 대략적인 이론은 다음과 같다.

참고 자료

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