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[반도체 공정]mocvd

저작시기 2005.05 | 등록일 2005.05.22 워드파일 MS 워드 (doc) | 6페이지 | 가격 500원

소개글

mocvd 그리고 cvd에 관한 전반적인 내용을
담고있습니다.

목차

1.meaning & kind of MOCVD
2.MOCVD growth system
3.Operation principle of MOCVD
4.Advantages & disadvantages of MOCVD
5.Applicayion of MOCVD
6.Shape of MOCVD
7.References

본문내용

Chemical Vapor Deposition (CVD) is a chemical process for depositing thin films of various materials. In a typical CVD process the substrate is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile byproducts are also produced, which are removed by gas flow through the reaction chamber.

CVD is widely used in the semiconductor industry, as part of the semiconductor device fabrication process, to deposit various films including: polycrystalline, amorphous, and epitaxial silicon, SiO2, silicon germanium, tungsten, silicon nitride, silicon oxynitride, titanium nitride, and various high-k dielectrics.

Advantage
Process possibility at low temperature
Process is simplicity
Do not inflict damage board and crystal surface
Because of deposition rate, processing time shortening

Disadvantage
Carbon impurities are included
Additional device necessity

참고 자료

The MOCVD Challenge ?volume 2: Manijeh Razeghi
http://www.aixtron.com/
http://221.163.10.3/kor/
http://matlb.kjist.ac.kr/%7Emaster/gan/introduction.htm
http://www.bambooweb.com/articles/c/h/Chemical_vapor_deposition.html
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